- Product Model K4B4G1646E-BYK000
- Brand Samsung Semiconductor
- RoHS 1
- Description DDR3-1600 4GB (256MX16)1.25NS CL
- Classification Memory
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Technical Details
- Package / Case 96-TFBGA
- Mounting Type Surface Mount
- Memory Size 4Gbit
- Memory Type Volatile
- Operating Temperature 0°C ~ 95°C
- Voltage - Supply 1.35V
- Clock Frequency 800 MHz
- Memory Format DRAM
- Memory Interface Parallel
- Memory Organization 256M x 16
- DigiKey Programmable Not Verified
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